 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| (R) STPS61H100CW HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS 2 x 30 A 100 V 175C 0.67 V A2 K HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE HIGH FREQUENCY OPERATION A2 K A1 TO-247 DESCRIPTION Dual center tap Schottky rectifiers suited for high frequency switch mode power supply. Packaged in TO-247, this devices is intended for use to enhance the reliability of the application. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 150C = 0.5 tp = 1s Per diode Per device Value 100 80 30 60 450 26400 - 65 to + 175 175 10000 Unit V A A A W C C V/s tp = 10 ms Sinusoidal Tj = 25C *: dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/4 October 2003 - Ed: 1A STPS61H100CW THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-c) Parameter Junction to case Junction to case Per diode Total Coupling Value 0.9 0.6 0.3 Unit C/W C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.56 x IF(AV) + 0.0036 IF (RMS) Min. Typ. 3 4 Max. 16 16 0.79 0.67 0.93 0.78 Unit A mA V VR = VRRM IF = 30 A IF = 30 A IF = 60 A IF = 60 A 0.63 0.72 Fig. 1: Conduction losses versus average current (per diode). PF(AV)(W) 30 Fig. 2: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 = 0.1 25 = 0.2 = 0.5 = 0.05 =1 20 0.1 15 10 0.01 T 5 IF(AV)(A) 0 0 5 10 15 20 25 30 =tp/T 35 tp 40 0.001 0.01 0.1 1 tp(s) 10 100 1000 Fig. 3: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.8 0.6 Fig. 4: Average forward current versus ambient temperature (=0.5, per diode). IF(AV)(A) 35 Rth(j-a)=Rth(j-c) 30 25 20 15 0.4 10 Rth(j-a)=15C/W T 0.2 Tj(C) 0 25 50 75 100 125 150 5 0 0 =tp/T 25 tp 50 Tamb(C) 75 100 125 150 175 2/4 STPS61H100CW Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 400 350 300 0.7 250 Tc=25C Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.6 0.5 = 0.5 200 150 100 IM Tc=75C 0.4 0.3 = 0.2 = 0.1 T Tc=125C t 0.2 Single pulse 50 0 1.E-03 =0.5 t(s) 1.E-02 1.E-01 1.E+00 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 =tp/T tp 1.E+00 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) 1.E+02 Tj=150C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 10.00 F=1MHz VOSC=30mVRMS Tj=25C 1.E+01 Tj=125C 1.E+00 Tj=100C 1.E-01 Tj=75C 1.00 1.E-02 Tj=50C 1.E-03 Tj=25C 1.E-04 10 20 30 40 VR(V) 50 60 70 80 90 100 VR(V) 0.10 1 10 100 Fig. 9: Forward voltage drop versus forward current (per diode). IFM(A) 100 Tj=125C (maximum values) Tj=125C (typical values) Tj=25C (maximum values) 10 VFM(V) 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 3/4 STPS61H100CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Millimeters Max. 5.15 2.60 0.80 1.40 Inches Min. Typ. Max. 0.191 0.203 0.086 0.102 0.015 0.031 0.039 0.055 0.118 0.078 0.078 0.094 0.118 0.133 0.429 0.608 0.620 0.781 0.793 0.145 0.169 0.728 0.559 0.582 1.362 0.216 0.078 0.118 5 60 0.139 0.143 V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D Min. Typ. A 4.85 D 2.20 E 0.40 F 1.00 F1 3.00 F2 2.00 F3 2.00 F4 3.00 G 10.90 H 15.45 L 19.85 L1 3.70 L2 18.50 L3 14.20 L4 34.60 L5 5.50 M 2.00 V 5 V2 60 Dia. 3.55 2.40 3.40 15.75 20.15 4.30 14.80 3.00 3.65 Cooling method : C Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Ordering type STPS61H100CW Marking STPS61H100CW Package TO-247 Weight 4.4g Base qty 30 Delivery mode Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 4/4 |
Price & Availability of STPS61H100CW
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |